Nanoscale Transistors: Device Physics, Modeling and Simulation Review

Average Reviews:

(More customer reviews)This book gets two stars because I estimate 2 out of 5 readers attracted to this title will find what they want. The authors deliberately limit the target audience to those that have mastered S. Datta's two books: "Electronic Conduction in Mesoscopic Systems" and "Quantum Transport: Atom to Transistor". In addition, the readers should have assembled a small library of journal articles for "details", particularly those up to 2003 with author Lundstrom as participating author. However, the authors do relent briefly in Chapter 2, which is an undergraduate lecture on MOSFETs and bipolar devices.
The audience is further limited to those that expect band theory to apply to these devices, and an effective mass approximation to band theory at that. Devices tend to be "thermal reservoirs" connected by geometrically ideal bars that confine the electrons. A third "gate" electrode shifts the density of states up or down with the gate voltage. An idealized transmission coefficient treats scattering.
If you are in the target audience you'll be happy with this book. If you want a book that presents theoretical and numerical detail, doesn't require an ancillary library of journal papers, and deals with real boundary dependencies, this book is not it.

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Product Description:

The continuous scaling of transistors in the last half of century has been the driving force for electronics. The channel length of the transistors in production today is below 100nm. A wide variety of devices are also being explored to complement or even replace silicon transistors at molecular scales. Similarities between nanoscale and micronscale transistors exist, but nanotransistors also behave in drastically different ways. For example, ballistic transport and quantum effects become much more important. To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary.The book provides a description of the recent development of theory, modeling, and simulation of nanotransistors for engineers and scientists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors.

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